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TBB1002 Datasheet(PDF) 7 Page - Renesas Technology Corp |
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TBB1002 Datasheet(HTML) 7 Page - Renesas Technology Corp |
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7 / 10 page  TBB1002 Rev.9.00 Aug 22, 2006 page 7 of 9 0 1 234 5 25 20 15 10 5 VG2S = 4 V VG1 = VDS Typical Output Characteristics (FET2) Drain to Source Voltage VDS (V) 120 kΩ 150 kΩ 25 20 15 10 5 0 12 3 4 5 VDS = 5 V RG = 82 kΩ Drain Current vs. Gate1 Voltage (FET2) Gate1 Voltage VG1 (V) 2 V VG2S = 1 V 4 V 3 V 50 40 30 20 10 0 12 34 5 VDS = 5 V Gate1 Voltage VG1 (V) Forward Transfer Admittance vs. Gate1 Voltage (FET2) VG2S = 4 V 120 k Ω RG = 56 kΩ 82 k Ω 0 1 2 3 4 4 3 2 1 0 Gate2 to Source Voltage VG2S (V) Input Capacitance vs. Gate2 to Source Voltage (FET2) 30 25 20 15 10 5 0 10 20 50 100 200 500 1000 VDS = 5 V VG1 = 5 V VG2S = 4 V Drain Current vs. Gate Resistance (FET2) Gate Resistance RG (kΩ) 40 35 30 25 20 15 10 10 20 50 100 200 500 1000 VDS = 5 V VG1 = 5 V VG2S = 4 V f = 200 MHz Power Gain vs. Gate Resistance (FET2) Gate Resistance RG (kΩ) VDS = 5 V VG1 = 5 V RG = 82 kΩ f = 1 MHz |
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