TBB1004

Rev.11.00 Aug 22, 2006 page 2 of 9

Absolute Maximum Ratings

(Ta = 25

°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

6

V

Gate1 to source voltage

+6

-0

V

Gate2 to source voltage

+6

-0

V

Drain current

30

mA

Channel power dissipation

Pch

*3

250

mW

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Note:

3. Value on the glass epoxy board (49mm

× 38mm × 1mm).

Electrical Characteristics

(Ta = 25

°C)

The below specification are applicable for UHF unit (FET1)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Drain to source breakdown voltage

6

—

—

V

Gate1 to source breakdown voltage

+6

—

—

V

Gate2 to source breakdown voltage

+6

—

—

V

Gate1 to source cutoff current

—

—

+100

nA

Gate2 to source cutoff current

—

—

+100

nA

Gate1 to source cutoff voltage

0.5

0.7

1.0

V

µA

Gate2 to source cutoff voltage

0.5

0.7

1.0

V

µA

Drain current

13

17

21

mA

Ω

Forward transfer admittance

21

26

31

mS

Ω, f = 1 kHz

Input capacitance

Ciss

1.4

1.8

2.2

pF

Output capacitance

Coss

1.0

1.4

1.8

pF

Reverse transfer capacitance

Crss

—

0.02

0.04

pF

Ω

f = 1 MHz

Power gain

PG

16

21

—

dB

Noise figure

NF

—

1.7

2.5

dB

Ω, f = 900 MHz

Zi = S11*, Zo = S22*(:PG)

Zi = S11opt (:NF)