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TBB1016RMTL-E Datasheet(PDF) 5 Page - Renesas Technology Corp |
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TBB1016RMTL-E Datasheet(HTML) 5 Page - Renesas Technology Corp |
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5 / 10 page  TBB1016 Rev.2.00 Aug 22, 2006 page 5 of 9 Main Characteristics 400 300 200 100 0 50 100 150 200 Ambient Temperature Ta ( °C) Maximum Channel Power Dissipation Curve Typical Output Characteristics Drain to Source Voltage VDS (V) Drain Current vs. Gate1 Voltage Gate1 Voltage VG1 (V) * Value on the glass epoxy board (50 mm × 40 mm × 1 mm) Gate1 Voltage VG1 (V) Forward Transfer Admittance vs. Gate1 Voltage Gate2 to Source Voltage VG2S (V) Input Capacitance vs. Gate2 to Source Voltage Drain Current vs. Gate Resistance Gate Resistance RG (kΩ) 0 12 3 4 5 25 20 15 10 5 25 20 15 10 5 0 1 234 5 50 40 30 20 10 0 12 34 5 0 1 2 34 5 4 3 2 1 0 30 25 20 15 10 5 0 10 20 50 100 200 500 1000 VG2S = 4 V VG1 = VDS 150 kΩ 180 kΩ 220 kΩ VDS = 5 V RG = 120 kΩ VG2S = 1 V 4 V 3 V 2 V VG2S = 1 V 4 V 3 V 2 V VDS = 5 V RG = 120 kΩ f = 1 kHz VDS = VG1 = 5 V VG2S = 4 V VDS = VG1 = 5 V RG = 120 kΩ f = 1 MHz |
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