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RJK0389DPA-00-J0 Datasheet(PDF) 1 Page - Renesas Technology Corp

Part # RJK0389DPA-00-J0
Description  Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJK0389DPA-00-J0 Datasheet(HTML) 1 Page - Renesas Technology Corp

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REJ03G1722-0102 Rev.1.02 Jul 25, 2008
Page 1 of 4
RJK0389DPA
Silicon N Channel Power MOS FET with Schottky Barrier Diode
High Speed Power Switching
REJ03G1722-0102
Preliminary
Rev.1.02
Jul 25, 2008
Features
• Low on-resistance
• Capable of 4.5 V gate drive
• High density mounting
• Pb-free
• Halogen-free
Outline
WPAK
G1
D1
G2
S2
MOS1
MOS2 + SBD
1
2
8
5
S1/D2
9
D1
3
S2
6
S2
7
D1
4
Absolute Maximum Ratings
(Ta = 25°C)
Ratings
Item
Symbol
MOS1
MOS2
Unit
Drain to source voltage
VDSS
30
30
V
Gate to source voltage
VGSS
±20
±20
V
Drain current
ID
15
20
A
Drain peak current
ID(pulse)
Note1
60
80
A
Reverse drain current
IDR
15
20
A
Avalanche current
IAP
Note 2
8
11
A
Avalanche energy
EAR
Note 2
6.4
12.1
mJ
Channel dissipation
Pch
Note3
10
10
W
Channel temperature
Tch
150
150
°C
Storage temperature
Tstg
–55 to +150
–55 to +150
°C
Notes: 1. PW
≤ 10 µs, duty cycle ≤ 1%
2. Value at Tch = 25
°C, Rg ≥ 50 Ω
3. Tc = 25
°C
1
2
3
4
8
7
6
5
9
(Bottom View)


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