Electronic Components Datasheet Search |
|
RJK0389DPA-00-J0 Datasheet(PDF) 1 Page - Renesas Technology Corp |
|
RJK0389DPA-00-J0 Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 5 page REJ03G1722-0102 Rev.1.02 Jul 25, 2008 Page 1 of 4 RJK0389DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching REJ03G1722-0102 Preliminary Rev.1.02 Jul 25, 2008 Features • Low on-resistance • Capable of 4.5 V gate drive • High density mounting • Pb-free • Halogen-free Outline WPAK G1 D1 G2 S2 MOS1 MOS2 + SBD 1 2 8 5 S1/D2 9 D1 3 S2 6 S2 7 D1 4 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Symbol MOS1 MOS2 Unit Drain to source voltage VDSS 30 30 V Gate to source voltage VGSS ±20 ±20 V Drain current ID 15 20 A Drain peak current ID(pulse) Note1 60 80 A Reverse drain current IDR 15 20 A Avalanche current IAP Note 2 8 11 A Avalanche energy EAR Note 2 6.4 12.1 mJ Channel dissipation Pch Note3 10 10 W Channel temperature Tch 150 150 °C Storage temperature Tstg –55 to +150 –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25 °C, Rg ≥ 50 Ω 3. Tc = 25 °C 1 2 3 4 8 7 6 5 9 (Bottom View) |
Similar Part No. - RJK0389DPA-00-J0 |
|
Similar Description - RJK0389DPA-00-J0 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |