HM62W16258BLTTI-7 datasheet(7/17 Pages) RENESAS

Part #	HM62W16258BLTTI-7

Description	4 M SRAM (256-kword 쨈 16-bit)

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Manufacturer	RENESAS [Renesas Technology Corp]

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HM62W16258BI Series

5

DC Characteristics

Parameter

Symbol Min

Typ*

1

Max

Unit

Test conditions

Input leakage current

|I

LI|—

—

1

µA

Vin = V

SS to V CC

Output leakage current

|I

LO|—

—

1

µA

CS = V

IH or OE = VIH or WE = VIL, or

LB = UB =V

IH,, VI/O = VSS to V CC

Operating current

I

CC

—

20

mA

CS = V

IL, Others = VIH/VIL, II/O = 0 mA

Average

operating

current

HM62W16258BI-7 I

CC1

—

70

mA

Min. cycle, duty = 100%,

I

I/O = 0 mA, CS = VIL,

Others = V

IH/VIL

I

CC2

—

3

15

mA

Cycle time = 1

µs, duty = 100%,

I

I/O = 0 mA, CS ≤ 0.2 V,

V

IH ≥ V CC – 0.2 V, VIL ≤ 0.2 V

Standby current

I

SB

—

0.3

mA

CS = V

IH

Standby current

I

SB1

—1

40

µA

0 V

≤ Vin

CS

≥ V

CC – 0.2 V

Output high voltage

V

OH

2.4

—

V

I

OH = –1 mA

V

CC – 0.2 —

—

V

I

OH = –100 µA

Output low voltage

V

OL

—

0.4

V

I

OL = 2 mA

—

0.2

V

I

OL = 100 µA

Notes: 1. Typical values are at V

CC = 3.0 V, Ta = +25°C and not guaranteed.

Capacitance (Ta = +25

°C, f = 1.0 MHz)

Parameter

Symbol

Min

Typ

Max

Unit

Test conditions

Note

Input capacitance

Cin

—

8

pF

Vin = 0 V

1

Input/output capacitance

C

I/O

—

10

pF

V

I/O = 0 V

1

Note:

1. This parameter is sampled and not 100% tested.

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HM62W16258BLTTI-7 Datasheet(PDF) 7 Page - Renesas Technology Corp

HM62W16258BLTTI-7 Datasheet(HTML) 7 Page - Renesas Technology Corp

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