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STU11NC60 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STU11NC60
Description  N-CHANNEL 600V - 0.48ohm - 11A Max220 PowerMeshII MOSFET
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STU11NC60 Datasheet(HTML) 3 Page - STMicroelectronics

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STU11NC60
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300
µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Delay Time
Rise Time
VDD = 300V, ID =6 A
RG = 4.7Ω,VGS = 10V
(see test circuit, Figure 3)
20
ns
tr
15
ns
Qg
Total Gate Charge
VDD = 480V, ID =12 A,
VGS = 10V, RG =4.7Ω
65
90
nC
Qgs
Gate-Source Charge
13
nC
Qgd
Gate-Drain Charge
28
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
Off-voltage Rise Time
VDD = 480V, ID =12 A,
RG = 4.7Ω, VGS =10V
(see test circuit, Figure 5)
14
ns
tf
Fall Time
25
ns
tc
Cross-over Time
30
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
11
A
ISDM (2)
Source-drain Current (pulsed)
44
A
VSD (1)
Forward On Voltage
ISD = 12A,VGS =0
1.6
V
trr
Reverse Recovery Time
ISD = 12 A, di/dt = 100A/µs,
VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)
590
ns
Qrr
Reverse Recovery Charge
5.6
µC
IRRM
Reverse Recovery Current
19
A
Safe Operating Area
Thermal Impedance


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