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CR8PM-12 Datasheet(PDF) 2 Page - Renesas Technology Corp |
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CR8PM-12 Datasheet(HTML) 2 Page - Renesas Technology Corp |
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2 / 7 page  CR8PM-12 Rev.1.00, Aug.20.2004, page 2 of 6 Parameter Symbol Ratings Unit Conditions RMS on-state current IT (RMS) 12.6 A Average on-state current IT (AV) 8 A Commercial frequency, sine half wave 180° conduction, Tc = 81°C Surge on-state current ITSM 120 A 60Hz sine half wave 1 full cycle, peak value, non-repetitive I 2t for fusing I 2t60 A 2s Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Peak gate power dissipation PGM 5W Average gate power dissipation PG (AV) 0.5 W Peak gate forward voltage VFGM 6V Peak gate reverse voltage VRGM 10 V Peak gate forward current IFGM 2A Junction temperature Tj – 40 to +125 °C Storage temperature Tstg – 40 to +125 °C Mass — 2.0 g Typical value Isolation voltage Viso 1500 V Ta = 25°C, AC 1 minute, each terminal to case Electrical Characteristics Rated value Parameter Symbol Min. Typ. Max. Unit Test conditions Repetitive peak reverse current IRRM — — 2.0 mA Tj = 125°C, VRRM applied Repetitive peak off-state current IDRM — — 2.0 mA Tj = 125°C, VDRM applied On-state voltage VTM — — 1.4 V Tc = 25°C, ITM = 25 A, instantaneous value Gate trigger voltage VGT — — 1.0 V Tj = 25°C, VD = 6 V, IT = 1 A Gate non-trigger voltage VGD 0.2 — — V Tj = 125°C, VD = 1/2 VDRM Gate trigger current IGT — — 15 mA Tj = 25°C, VD = 6 V, IT = 1 A Holding current IH — 15 — mA Tj = 25°C, VD = 12 V Thermal resistance Rth (j-c) — — 3.7 °C/W Junction to case Note1 Notes: 1. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W. |
Similar Part No. - CR8PM-12 |
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Similar Description - CR8PM-12 |
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