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2SD1527 Datasheet(PDF) 4 Page - Renesas Technology Corp |
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2SD1527 Datasheet(HTML) 4 Page - Renesas Technology Corp |
4 / 8 page 2SD1527 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to emitter breakdown voltage V (BR)CEO 1000 — — V I C = 1 mA, RBE = ∞ Emitter to base breakdown voltage V (BR)EBO 5— — VI E = 1 mA, IC = 0 Collector cutoff current I CBO —— 10 µAV CB = 800 V, IE = 0 DC current transfer ratio h FE1 10 — — V CE = 5 V, IC = 10 mA h FE2 10 — — V CE = 5 V, IC = 100 mA Base to emitter voltage V BE — — 1.2 V V CE = 5 V, IC = 100 mA Collector to emitter saturation voltage V CE (sat) — — 5VI C = 300 mA, IB = 60 mA Gain bandwidth product f T — 5 — MHz V CE = 20 V, IC = 50 mA Collector output capacitance Cob — 5 — pF V CB = 100 V, IE = 0, f = 1 MHz 0 50 100 150 Case temperature TC (°C) Maximum Collector Dissipation Curve 30 20 10 Collector to emitter voltage VCE (V) Area of Safe Operation 30 100 300 1,000 3,000 0.01 0.1 1.0 TC = 25°C P C = 25 W DC Operation (50 V, 0.5 A) (600 V, 0.042 A) (1,000 V, 0.015 A) |
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