2SD2123L datasheet(4/8 Pages) RENESAS

Part #	2SD2123L

Description	Silicon NPN Epitaxial

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Manufacturer	RENESAS [Renesas Technology Corp]

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2SD2122(L)/(S), 2SD2123(L)/(S)

2

Absolute Maximum Ratings (Ta = 25°C)

Ratings

Item

Symbol

2SD2122(L)/(S) 2SD2123(L)/(S) Unit

Collector to base voltage

V

CBO

180

V

Collector to emitter voltage

V

CEO

120

160

V

Emitter to base voltage

V

EBO

55V

Collector current

I

C

1.5

A

Collector peak current

I

C(peak)

33A

Collector power dissipation

P

C*

1

18

W

Junction temperature

Tj

150

°C

Storage temperature

Tstg

–55 to +150

°C

Note:

1. Value at T

C = 25°C.

Electrical Characteristics (Ta = 25°C)

2SD2122(L)/(S)

2SD2123(L)/(S)

Item

Symbol

Min

Typ

Max

Min

Typ

Max

Unit

Test conditions

Collector to base

breakdown voltage

V

(BR)CBO

180

—

180

—

V

I

C = 1 mA, IE = 0

Collector to emitter

breakdown voltage

V

(BR)CEO

120

—

160

—

V

I

C = 10 mA, RBE = ∞

Emitter to base

breakdown voltage

V

(BR)EBO

5—

—

5—

—

V

I

E = 1 mA, IC = 0

Collector cutoff current

I

CBO

——10——10

µAV

CB = 160 V, IE = 0

DC current transfer ratio h

FE1*

2

60

—

200

60

—

200

A

V

CE = 5 V, IC = 150 mA*

1

h

FE2

30

—

30

—

V

CE = 5 V, IC = 500 mA*

1

Collector to emitter

saturation voltage

V

CE(sat)

——1

V

I

C = 500 mA,

I

B = 50 mA*

1

Base to emitter voltage

V

BE

—

1.5

—

1.5

V

CE = 5 V, IC = 150 mA*

1

Gain bandwidth product f

T

—

180

—

180

—

MHz

V

CE = 5 V, IC = 150 mA*

1

Collector output

capacitance

Cob

—

14

—

14

—

pF

V

CB = 10 V, IE = 0,

f = 1 MHz

Notes: 1. Pulse test

2. The 2SD2122(L)/(S) and 2SD2123(L)/(S) are grouped by h

FE1 as follows.

BC

60 to 120

100 to 200

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