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HTT1115EFTL-E Datasheet(PDF) 2 Page - Renesas Technology Corp |
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HTT1115EFTL-E Datasheet(HTML) 2 Page - Renesas Technology Corp |
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2 / 9 page  HTT1115E Rev.2.00 Aug 10, 2005 page 2 of 8 Absolute Maximum Ratings (Ta = 25 °C) Ratings Item Symbol Q1 Q2 Unit Collector to base voltage VCBO 15 10 V Collector to emitter voltage VCEO 4 3.5 V Emitter to base voltage VEBO 1.5 1.5 V Collector current IC 50 80 mA Collector power dissipation PC Total 200* mW Junction temperature Tj 150 150 °C Storage temperature Tstg –55 to +150 –50 to +150 °C Note: Value on PCB. (FR–4 (13 x 13 x 0.635 mm)). Electrical Characteristics (Q1) (Ta = 25 °C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 15 ⎯ ⎯ V IC = 10 µA, IE = 0 Collector cutoff current ICBO ⎯ ⎯ 0.1 µA VCB = 15 V, IE = 0 Collector cutoff current ICEO ⎯ ⎯ 1 µA VCE = 4 V, RBE = infinite Emitter cutoff current IEBO ⎯ ⎯ 0.2 µA VEB = 0.8 V, IC = 0 DC current transfer ratio hFE 100 130 170 ⎯ VCE = 1 V, IC = 5 mA Reverse transfer capacitance Cre ⎯ 0.3 0.45 pF VCB = 1 V, f = 1 MHz Emitter ground Gain bandwidth product fT 10 12 ⎯ GHz VCE = 1 V, IC = 5 mA, f = 1 GHz Forward transfer coefficient |S21| 2 13 16 ⎯ dB Noise figure NF ⎯ 1.0 2.0 dB VCE = 1 V, IC = 5 mA, f = 900 MHz, ΓS = ΓL = 50 Ω Electrical Characteristics (Q2) (Ta = 25 °C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 10 ⎯ ⎯ V IC = 10 µA, IE = 0 Collector cutoff current ICBO ⎯ ⎯ 0.6 µA VCB = 10 V, IE = 0 Collector cutoff current ICEO ⎯ ⎯ 0.2 µA VCE = 3.5 V, RBE = infinite Emitter cutoff current IEBO ⎯ ⎯ 0.1 µA VEB = 1.5 V, IC = 0 DC current transfer ratio hFE 80 100 130 ⎯ VCE = 1 V, IC = 5 mA Reverse transfer capacitance Cre ⎯ 0.8 1.1 pF VCB = 1 V, f = 1 MHz Emitter ground Gain bandwidth product fT 4 6 ⎯ GHz VCE = 1 V, IC = 5 mA, f = 1 GHz Forward transfer coefficient |S21| 2 7 10 ⎯ dB Noise figure NF ⎯ 1.5 2.3 dB VCE = 1 V, IC = 5 mA, f = 900 MHz ΓS = ΓL = 50 Ω |
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