UNISONIC TECHNOLOGIES CO., LTD

19N10

Preliminary

Power MOSFET

www.unisonic.com.tw

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Copyright © 2008 Unisonic Technologies Co., Ltd

QW-R502-261.a

100V N-Channel MOSFET

DESCRIPTION

The UTC 100V N-Channel enhancement mode power field

effect transistors (MOSFET) are produced by UTC’s planar stripe,

DMOS technology which has been tailored especially in the

avalanche and commutation mode to minimize on-state

resistance,

provide

superior

switching

performance,

and

withstand high energy pulse. They are suited for low voltage

applications such as audio amplifier, high efficiency switching

DC/DC converters, and DC motor control.

FEATURES

* Ultra low gate charge ( typical 19nC )

* Fast switching capability

* Avalanche energy Specified

* Improved dv/dt capability, high ruggedness

SYMBOL

1.Gate

3.Source

2.Drain

Lead-free:

19N10L

Halogen-free: 19N10G

ORDERING INFORMATION

Ordering Number

Pin Assignment

Normal

Lead Free

Halogen Free

Package

1

2

3

Packing

19N10-TM3-T

19N10L-TM3-T

19N10G-TM3-T

TO-251

G

D

S

Tube