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19N10G-TM3-T Datasheet(PDF) 3 Page - Unisonic Technologies |
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19N10G-TM3-T Datasheet(HTML) 3 Page - Unisonic Technologies |
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3 / 6 page  19N10 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 6 www.unisonic.com.tw QW-R502-261.a ELECTRICAL CHARACTERISTICS (Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD VGS=0V, IS=15.6A 1.5 V Maximum Body-Diode Continuous Current IS 15.6 A Maximum Pulsed Drain-Source Diode Forward Current ISM 62.4 A Body Diode Reverse Recovery Time tRR 78 ns Body Diode Reverse Recovery Charge QRR VGS= 0V, IS=19A, dIF/dt=100A/μs (Note 1) 200 nC Note: 1. Pulse Test : Pulse width ≤300µs, Duty cycle ≤ 2% Note: 2. Essentially independent of operating temperature |
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