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FX6ASJ-06-T13 Datasheet(PDF) 1 Page - Renesas Technology Corp |
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FX6ASJ-06-T13 Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 7 page Rev.2.00 Aug 07, 2006 page 1 of 6 FX6ASJ-06 High-Speed Switching Use Pch Power MOS FET REJ03G1437-0200 (Previous: MEJ02G0272-0101) Rev.2.00 Aug 07, 2006 Features • Drive voltage : 4 V • V DSS : – 60 V • r DS(ON) (max) : 0.21 Ω • I D : – 6 A • Integrated Fast Recovery Diode (TYP.) : 50 ns Outline RENESAS Package code: PRSS0004ZA-A (Package name: MP-3A) 1. Gate 2. Drain 3. Source 4. Drain 1 3 2 4 1 2, 4 3 Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. Maximum Ratings (Tc = 25°C) Parameter Symbol Ratings Unit Conditions Drain-source voltage VDSS –60 V VGS = 0 V Gate-source voltage VGSS ±20 V VDS = 0 V Drain current ID –6 A Drain current (Pulsed) IDM –24 A Avalanche drain current (Pulsed) IDA –6 A L = 100 µH Source current IS –6 A Source current (Pulsed) ISM –24 A Maximum power dissipation PD 30 W Channel temperature Tch – 55 to +150 °C Storage temperature Tstg – 55 to +150 °C Mass — 0.32 g Typical value |
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