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GN4014ZB4LS Datasheet(PDF) 2 Page - Renesas Technology Corp |
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GN4014ZB4LS Datasheet(HTML) 2 Page - Renesas Technology Corp |
2 / 8 page GN4014ZB4LD, GN4014ZB4LS, GN4014ZB4LM Rev.2.00 Jul. 14, 2005, page 2 of 7 Electrical Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit Test Conditions Collector to Emitter breakdown voltage V(BR)CES 370 400 430 V Ic = 2 mA, VGE = 0 V Gate to Emitter breakdown voltage V(BR)GES ±20 — — V IG = ±100 µA, VCE = 0 V Collector cutoff current ICES — — 100 µA VCE = 300 V, VGE = 0 V Gate cutoff current IGES — — ±100 µA VGE = ±20 V, VCE = 0 V Collector to emitter saturation voltage VCE(sat)1 — 1.4 1.7 V IC = 8 A, VGE = 10 V Collector to emitter saturation voltage VCE(sat)2 — 1.6 2.2 V IC = 8 A, VGE = 4 V Gate to emitter cutoff voltage VGE(off) 1.3 — 2.2 V IC = 1 mA, VCE = 10 V Turn-on delay time td(on) — 0.2 — µs Rise time tr — 0.4 — µs Turn-off delay time td (off) — 1.0 — µs Fall time tf — 5 — µs VCE = 300 V, RL = 50 Ω, VGE = 5 V, RG = 200 Ω Input capacitance Ciss — 1110 — pF Output capacitance Coss — 75 — pF Reveres transfer capacitance Cres — 18 — pF VCE = 10 V, VGE = 0, f = 1 MHz Secondary breakdown energy Es/b 230 — — mJ L = 5 mH |
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