W7NB80 datasheet(3/8 Pages) STMICROELECTRONICS

Part #	W7NB80

Description	N-CHANNEL 800V - 1.6ohm - 6.5A - TO-247 PowerMESH MOSFET

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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3 / 8 page

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

td(on)

tr

Turn-on Time

Rise Time

VDD =400 V

ID =3 A

RG =4.7

Ω

VGS =10 V

19

9

ns

Qg

Q gs

Qgd

Tot al G ate Charge

Gat e-Source Charge

Gat e-Drain Charge

VDD = 640 V

ID =6 A

VGS =10 V

RG =4.7

Ω

VGS =10 V

33

11

14

47

nC

SWITCHING OFF

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

tr(Voff)

tf

tc

Off -volt age Rise T ime

Fall T ime

Cross-over Time

VDD =640 V

ID =6 A

RG =4.7

Ω VGS =10 V

11

9

16

ns

SOURCE DRAIN DIODE

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

ISD

ISDM (

•)

Source-drain Current

(pulsed)

6. 5

26

A

VSD (

∗)Forward On Voltage

ISD =6 A

VGS =0

1. 6

V

trr

Qrr

IRRM

Reverse Recovery

Time

Reverse Recovery

Charge

Reverse Recovery

Current

ISD =6 A

di/dt = 100 A/

µs

VDD = 100 V

Tj =150

oC

700

5.8

16.5

ns

µC

A

(

∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

(

•) Pulse width limited by safe operating area

Safe Operating Area

Thermal Impedance

STW7NB80

3/8

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