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HD6412332 Datasheet(PDF) 9 Page - Renesas Technology Corp |
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HD6412332 Datasheet(HTML) 9 Page - Renesas Technology Corp |
9 / 1244 page Rev.4.00 Sep. 07, 2007 Page ix of xxx Item Page Revision (See Manual for Details) 19.13.1 Features 789 Description amended • Reprogramming capability The flash memory can be reprogrammed min. 100 times. 910 Table 22.21 amended Item Symbol Min Typ Max Unit Erase time* 1 *3*6 tE — 50 1000 ms/block Reprogramming count NWEC 100* 7 10000* 8 — Times 22.2.6 Flash Memory Characteristics Table 22.21 Flash Memory Characteristics Data retention time* 9 tDRP 10 — — Years Programming Wait time after SWE bit setting* 1 x 1 — — μs 911 Notes 7 to 9 added Notes: 7. Minimum number of times for which all characteristics are guaranteed after rewriting (Guarantee range is 1 to minimum value). 8. Reference value for 25°C (as a guideline, rewriting should normally function up to this value). 9. Data retention characteristic when rewriting is performed within the specification range, including the minimum value. 1207 Note *1 deleted (Before) WDTOVF*1 → (After) WDTOVF D.1 Port States in Each Mode Table D.1 I/O Port States in Each Processing State 1208 Note 1 shown below deleted Note: 1. The WDTOVF pin function cannot be used in the F- ZTAT version. |
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