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1N3211 Datasheet(PDF) 2 Page - Vishay Siliconix |
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1N3211 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 4 page www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 93496 2 Revision: 24-Jun-08 1N3208 Series Vishay High Power Products Stud-Mounted Silicon Rectifier Diodes, 15 A Notes (1) JEDEC registered values (2) I2t for time tx = I2√t x √tx Note (1) JEDEC registered values FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current at case temperature IF(AV) 180° sinusoidal conduction 15 (1) A 150 (1) °C Maximum peak one cycle non-repetitive surge current IFSM Half cycle 50 Hz sine wave or 6 ms rectangular pulse Following any rated load condition and with rated VRRM applied 239 A Half cycle 60 Hz sine wave or 5 ms rectangular pulse 250 (1) Half cycle 50 Hz sine wave or 6 ms rectangular pulse Following any rated load condition and with VRRM applied following surge = 0 284 Half cycle 60 Hz sine wave or 5 ms rectangular pulse 297 Maximum I2t for fusing I2t t = 10 ms With rated VRRM applied following surge, initial TJ = 150 °C 286 A2s t = 8.3 ms 260 Maximum I2t for individual device fusing t = 10 ms With VRRM = 0 following surge, initial TJ = 150 °C 403 t = 8.3 ms 368 Maximum I2 √t for individual device fusing I2 √t (2) t = 0.1 to 10 ms, VRRM = 0 following surge 3870 A2 √s Maximum forward voltage drop VFM IF(AV) = 15 A (47.1 A peak), TC = 150 °C 1.5 (1) V Maximum average reverse current IR(AV) Maximum rated IF(AV) and TC = 150 °C 10 (1) mA THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction operating and storage temperature range TJ, TStg - 65 to 175 (1) °C Maximum internal thermal resistance, junction to case RthJC DC operation 0.65 °C/W Thermal resistance, case to sink RthCS Mounting surface, smooth, flat and greased 0.25 Mounting torque minimum Non-lubricated threads 2.3 (20) N · m (lbf · in) maximum 3.5 (30) Weight 28.5 g 1oz. Case style JEDEC DO-203AB (DO-5) |
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