4N32-X007 datasheet(2/8 Pages) VISHAY

Part #	4N32-X007

Description	Optocoupler, Photodarlington Output, High Gain, with Base Connection

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Manufacturer	VISHAY [Vishay Siliconix]

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For technical questions, contact: optocoupler.answers@vishay.com

Document Number: 81865

2

Rev. 1.0, 11-Mar-08

4N32-X000/4N33-X000

Vishay Semiconductors Optocoupler, Photodarlington Output,

High Gain, with Base Connection

Notes

(1) Tamb = 25 °C, unless otherwise specified.

Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not

implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum

ratings for extended periods of the time can adversely affect reliability.

(2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through

hole devices (DIP).

Notes

(1) Tamb = 25 °C, unless otherwise specified.

Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering

evaluation. Typical values are for information only and are not part of the testing requirements.

(2) Indicates JEDEC registered values.

COUPLER

Total dissipation

Ptot

250

mW

Derate linearly

3.3

mW/°C

Isolation test voltage (between emitter

and detector, standard climate:

23 °C/ 50 % RH,\\nDIN 500 14)

VISO

5300

VRMS

Leakage path

7.0

mm min.

Air path

7.0

mm min.

Isolation resistance

VIO = 500 V, Tamb = 25 °C

RIO

≥ 1012

Ω

VIO = 500 V, Tamb = 100 °C

RIO

≥ 1011

Ω

Storage temperature

Tstg

- 55 to + 150

°C

Operating temperature

Tamb

- 55 to + 100

°C

Lead soldering time (2)

at 260 °C

10

s

ELECTRICAL CHARACTERISTICS (1)

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

INPUT

Forward voltage

IF = 50 mA

VF

1.25

1.5

V

Reverse current

VR = 3.0 V

IR

0.1

100

µA

Capacitance

VR = 0 V

CO

25

pF

OUTPUT

Collector emitter breakdown voltage (2)

IC = 100 µA, IF = 0

BVCEO

30

V

Collector base breakdown voltage (2)

IC = 100 µA, IF = 0

BVCBO

50

V

Emitter base breakdown voltage (2)

IC = 100 µA, IF = 0

BVEBO

8V

Emitter collector breakdown voltage (2)

IC = 100 µA, IF = 0

BVECO

510

V

Collector emitter leakage current

VCE = 10 V, IF = 0

ICEO

1.0

100

nA

IC = 0.5 mA, VCE = 5.0 V

hFE

13

COUPLER

Collector emitter saturation voltage

VCEsat

1.0

V

Coupling capacitance

1.5

pF

CURRENT TRANSFER RATIO

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Current transfer ratio

VCE = 10 V, IF = 10 mA

CTR

500

%

SWITCHING CHARACTERISTICS

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Turn-on time

VCC = 10 V, IC = 50 mA

ton

5.0

µs

Turn-off time

IF = 200 mA, RL = 180 Ω

toff

100

µs

ABSOLUTE MAXIMUM RATINGS (1)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

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