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TBA820 Datasheet(PDF) 3 Page - STMicroelectronics |
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TBA820 Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 6 page Symbol Parameter Test conditions Min. Typ. Max. Unit Vs Supply voltage 3 16 V Vo Quiescent output voltage (pin 5) 4 4.5 5 V Id Quiescent drain current 4 12 mA Ib Bias current (pin 3) 0.1 µA Po Output power d = 10% Rf = 120 Ω Vs = 12V Vs =9V Vs =9V Vs =6V Vs = 3.5V f = 1 kHz RL =8 Ω RL =4 Ω RL =8 Ω RL =4 Ω RL =4 Ω 0.9 2 1.6 1.2 0.75 0.25 W W W W W Ri Input resistance (pin 3) f = 1 kHz 5 M Ω B Frequency response (-3 dB) RL =8 Ω C5 = 1000 µF Rf = 120 Ω CB = 680 pF 25 to 7,000 Hz CB = 220 pF 25 to 20,000 d Distortion Po = 500 mW RL =8 Ω f= 1 kHz Rf =33 Ω 0.8 % Rf = 120 Ω 0.4 Gv Voltage gain (open loop) f = 1 kHz RL =8 Ω 75 dB Gv Voltage gain (closed loop) RL =8 Ω Rf =33 Ω 45 dB f= 1 kHz Rf = 120 Ω 34 eN Input noise voltage (*) 3 µV iN Input noise current (*) 0.4 nA S + N N Signal to noise ratio (*) Po = 1.2W RL =8 Ω Gv =34 dB R1 = 10K Ω 80 dB R1 = 50 k Ω 70 SVR Supply voltage rejection (test circuit of fig. 2) RL =8 Ω f(ripple) = 100 Hz C6 = 47 µF Rf = 120 Ω 42 dB ELECTRICAL CHARACTERISTICS (Refer to the test circuits Vs = 9V, Tamb =25 °C unless otherwise specified) (*) B = 22 Hz to 22 KHz 3/6 TBA820M |
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