STD4LNK60Z datasheet(5/11 Pages) STMICROELECTRONICS

Part #	STD4LNK60Z

Description	N-channel 600 V, 2.2 廓, 3.3 A, TO-220FP, DPAK Zener-protected SuperMESH??Power MOSFET

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STD4LNK60Z - STF4LNK60Z

Electrical characteristics

5/11

Table 8.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

ISD

ISDM

(1)

1.

Pulse width limited by package

Source-drain current

(pulsed)

3.3

13.2

A

VSD

(2)

2.

Pulsed: pulse duration = 300µs, duty cycle 1.5%

Forward on voltage

ISD= 3.3 A, VGS=0

TBD

V

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD= 3.3 A, di/dt = 100 A/µs,

VDD=480 V, Tj=150°C

(see Figure 7)

TBD

ns

nC

A

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