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HFB32PA120CPBF Datasheet(PDF) 2 Page - Vishay Siliconix |
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HFB32PA120CPBF Datasheet(HTML) 2 Page - Vishay Siliconix |
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2 / 7 page  www.vishay.com For technical questions, contact: diodes-tech@vishay.com Document Number: 93095 2 Revision: 29-Jul-08 HFA32PA120C Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 2 x 16 A ELECTRICAL SPECIFICATIONS PER LEG (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Cathode to anode breakdown voltage VBR IR = 100 µA 1200 - - V Maximum forward voltage VFM IF = 16 A See fig. 1 -2.5 3.0 IF = 32 A - 3.2 3.93 IF = 16 A, TJ = 125 °C - 2.3 2.7 Maximum reverse leakage current IRM VR = VR rated See fig. 2 -0.75 20 µA TJ = 125 °C, VR = 0.8 x VR rated - 375 2000 Junction capacitance CT VR = 200 V See fig. 3 - 27 40 pF Series inductance LS Measured lead to lead 5 mm from package body - 8.0 - nH DYNAMIC RECOVERY CHARACTERISTICS PER LEG (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Reverse recovery time See fig. 5, 10 trr IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V - 30 - ns trr1 TJ = 25 °C IF = 16 A dIF/dt = 200 A/µs VR = 200 V - 90 135 trr2 TJ = 125 °C - 164 245 Peak recovery current See fig. 6 IRRM1 TJ = 25 °C - 5.8 10 A IRRM2 TJ = 125 °C - 8.3 15 Reverse recovery charge See fig. 7 Qrr1 TJ = 25 °C - 260 675 nC Qrr2 TJ = 125 °C - 680 1838 Peak rate of fall of recovery current during tb See fig. 8 dI(rec)M/dt1 TJ = 25 °C - 120 - A/µs dI(rec)M/dt2 TJ = 125 °C - 76 - THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Lead temperature Tlead 0.063" from case (1.6 mm) for 10 s - - 300 °C Thermal resistance, junction to case RthJC - - 0.83 K/W Thermal resistance, junction to ambient RthJA Typical socket mount - - 80 Thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth and greased - 0.50 - Weight -2.0 - g -0.07- oz. Mounting torque 6.0 (5.0) - 12 (10) kgf · cm (lbf · in) Marking device Case style TO-247AC (JEDEC) HFA32PA120C |
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