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SIHF510-E3 Datasheet(PDF) 5 Page - Vishay Siliconix |
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SIHF510-E3 Datasheet(HTML) 5 Page - Vishay Siliconix |
5 / 8 page Document Number: 91015 www.vishay.com S-81377-Rev. A, 30-Jun-08 5 IRF510, SiHF510 Vishay Siliconix Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms TC, Case Temperature (°C) 1.0 2.0 3.0 4.0 5.0 6.0 25 150 125 100 75 50 91015_09 0.0 175 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % R D V GS R G D.U.T. 10 V + - V DS V DD V DS 90 % 10 % V GS t d(on) t r t d(off) t f 10 1 0.1 10-2 10-5 10-4 10-3 10-2 0.1 1 10 P DM t 1 t 2 t1, Rectangular Pulse Duration (s) Notes: 1. Duty Factor, D = t 1/t2 2. Peak T j = PDM x ZthJC + TC Single Pulse (Thermal Response) 0 - 0.5 0.2 0.1 0.05 0.02 0.01 91015_11 A R G IAS 0.01 Ω tp D.U.T L V DS + - V DD 10 V Vary tp to obtain required IAS IAS VDS VDD VDS tp |
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