Electronic Components Datasheet Search |
|
SIHF520 Datasheet(PDF) 4 Page - Vishay Siliconix |
|
SIHF520 Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 8 page www.vishay.com Document Number: 91017 4 S-81240-Rev. A, 16-Jun-08 IRF520, SiHF520 Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area 750 600 450 300 0 150 100 101 VDS, Drain-to-Source Voltage (V) C iss C rss C oss V GS = 0 V, f = 1 MHz C iss = Cgs + Cgd, Cds Shorted C rss = Cgd C oss = Cds + Cgd 91017_05 QG, Total Gate Charge (nC) 20 16 12 8 0 4 0 4 20 16 12 8 I D = 9.2 A For test circuit see figure 13 91017_06 V DS = 20 V V DS = 50 V V DS = 80 V 101 100 VSD, Source-to-Drain Voltage (V) 25 °C 175 °C V GS = 0 V 91017_07 0.5 0.9 0.8 0.7 0.6 1.0 1.2 1.1 10-1 102 10 µs 100 µs 1 ms 10 ms Operation in this area limited by R DS(on) VDS, Drain-to-Source Voltage (V) T C = 25 °C T J = 175 °C Single Pulse 0.1 103 0.1 2 5 1 2 5 10 2 5 2 5 25 1 25 10 25 102 25 103 91017_08 |
Similar Part No. - SIHF520 |
|
Similar Description - SIHF520 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |