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50WQ10FN Datasheet(PDF) 1 Page - Vishay Siliconix |
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50WQ10FN Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 6 page Document Number: 94235 For technical questions, contact: diodes-tech@vishay.com www.vishay.com Revision: 21-Apr-08 1 Schottky Rectifier, 5.5 A 50WQ10FNPbF Vishay High Power Products FEATURES • Popular D-PAK outline • Small foot print, surface mountable • Low forward voltage drop • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • Lead (Pb)-free (“PbF” suffix) • Designed and qualified for AEC Q101 level DESCRIPTION The 50WQ10FNPbF surface mount Schottky rectifier has been designed for applications requiring low forward drop and small foot prints on PC board. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. PRODUCT SUMMARY IF(AV) 5.5 A VR 100 V Base cathode Anode 1 3 4, 2 Anode D-PAK Available RoHS* COMPLIANT MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS IF(AV) Rectangular waveform 5.5 A VRRM 100 V IFSM tp = 5 µs sine 330 A VF 5 Apk, TJ = 125 °C 0.63 V TJ Range - 40 to 150 °C VOLTAGE RATINGS PARAMETER SYMBOL 50WQ10FNPbF UNITS Maximum DC reverse voltage VR 100 V Maximum working peak reverse voltage VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current See fig. 5 IF(AV) 50 % duty cycle at TC = 135 °C, rectangular waveform 5.5 A Maximum peak one cycle non-repetitive surge current See fig. 7 IFSM 5 µs sine or 3 µs rect. pulse Following any rated load condition and with rated VRRM applied 330 10 ms sine or 6 ms rect. pulse 110 Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 0.5 A, L = 40 mH 6.0 mJ Repetitive avalanche current IAR Current decaying linearly to zero in 1 µs Frequency limited by TJ maximum VA = 1.5 x VR typical 0.5 A * Pb containing terminations are not RoHS compliant, exemptions may apply |
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