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Document Number: 91095

2

S-81393-Rev. A, 07-Jul-08

IRFB13N50A, SiHFB13N50A

Vishay Siliconix

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width

≤ 300 µs; duty cycle ≤ 2 %.

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

-62

°C/W

Case-to-Sink, Flat, Greasd Surface

0.50

-

Maximum Junction-to-Case (Drain)

-0.50

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

500

-

-

V

ΔV

-

0.55

-

V/°C

Gate-Source Threshold Voltage

2.0

-

4.0

V

Gate-Source Leakage

-

-

± 100

nA

Zero Gate Voltage Drain Current

-

-

25

µA

-

-

250

Drain-Source On-State Resistance

-

-

0.450

Ω

Forward Transconductance

8.1

-

-

S

Dynamic

Input Capacitance

f = 1.0 MHz, see fig. 5

-

1910

-

pF

Output Capacitance

-

290

-

Reverse Transfer Capacitance

-11

-

Output Capacitance

-

2730

-

-

82

-

Effective Output Capacitance

-

160

-

Total Gate Charge

--

81

nC

Gate-Source Charge

--

20

Gate-Drain Charge

--

36

Turn-On Delay Time

-15

-

ns

Rise Time

-39

-

Turn-Off Delay Time

-39

-

Fall Time

-31

-

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

MOSFET symbol

showing the

integral reverse

p - n junction diode

--

14

A

--

56

Body Diode Voltage

--

1.5

V

Body Diode Reverse Recovery Time

-

370

550

ns

Body Diode Reverse Recovery Charge

-4.4

6.5

µC

Body Diode Reverse Recovery Current

-21

31

A

Forward Turn-On Time

S

D

G