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SIHFBF20L Datasheet(PDF) 1 Page - Vishay Siliconix |
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SIHFBF20L Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Document Number: 91121 www.vishay.com S-Pending-Rev. A, 23-Jun-08 WORK-IN-PROGRESS 1 Power MOSFET IRFBF20S, IRFBF20L, SiHFBF20S, SiHFBF20L Vishay Siliconix FEATURES • Surface Mount (IRFBF20S/SiHFBF20S) • Low-Profile Through-Hole (IRFBF20L/SiHFBF20L) • Available in Tape and Reel (IRFBF20S/SiHFBF20S) • Dynamic dV/dt Rating • 150 °C Operating Temperature • Fast Switching • Fully Avalanche Rated • Lead (Pb)-free Available DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capabel of the accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRFBF20L/SiHFBF20L) is available for low-profile applications. Note a. See device orientation. PRODUCT SUMMARY VDS (V) 900 RDS(on) (Ω)VGS = 10 V 8.0 Qg (Max.) (nC) 38 Qgs (nC) 4.7 Qgd (nC) 21 Configuration Single N-Channel MOSFET G D S D2PAK (TO-263) G D S I2PAK (TO-262) Available RoHS* COMPLIANT ORDERING INFORMATION Package D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) I2PAK (TO-262) Lead (Pb)-free IRFBF20SPbF IRFBF20STRLPbFa IRFBF20STRRPbFa IRFBF20LPbF SiHFBF20S-E3 SiHFBF20STL-E3a SiHFBF20STR-E3a SiHFBF20L-E3 SnPb IRFBF20S IRFBF20STRLa IRFBF20STRRa IRFBF20L SiHFBF20S-E3 SiHFBF20STLa SiHFBF20STRa SiHFBF20L ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltagee VDS 900 V Gate-Source Voltagee VGS ± 20 Continuous Drain Current VGS at 10 V TC = 25 °C ID 1.7 A TC = 100 °C 1.1 Pulsed Drain Currenta,e IDM 6.8 Linear Derating Factor 0.43 W/°C Single Pulse Avalanche Energyb, e EAS 180 mJ Repetitive Avalanche Currenta IAR 1.7 A Repetitive Avalanche Energya EAR 5.4 mJ Maximum Power Dissipation TC = 25 °C PD 54 W TA = 25 °C 3.1 Peak Diode Recovery dV/dtc, e dV/dt 1.5 V/ns * Pb containing terminations are not RoHS compliant, exemptions may apply |
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