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FSS179 Datasheet(PDF) 2 Page - Sanyo Semicon Device

Part # FSS179
Description  P-Channel Silicon MOSFET General-Purpose Switching Device Applications
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

FSS179 Datasheet(HTML) 2 Page - Sanyo Semicon Device

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FSS179
No. A1294-2/4
14
5
8
5.0
0.595
1.27
0.2
0.43
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : SOP8
Continued from preceding page.
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Input Capacitance
Ciss
VDS=--10V, f=1MHz
1100
pF
Output Capacitance
Coss
VDS=--10V, f=1MHz
260
pF
Reverse Transfer Capacitance
Crss
VDS=--10V, f=1MHz
190
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
12.5
ns
Rise Time
tr
See specified Test Circuit.
146
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
107
ns
Fall Time
tf
See specified Test Circuit.
99
ns
Total Gate Charge
Qg
VDS=--15V, VGS=--10V, ID=--7A
22
nC
Gate-to-Source Charge
Qgs
VDS=--15V, VGS=--10V, ID=--7A
3.6
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=--15V, VGS=--10V, ID=--7A
5.4
nC
Diode Forward Voltage
VSD
IS=--7A, VGS=0V
--0.82
--1.2
V
Package Dimensions
Switching Time Test Circuit
unit : mm (typ)
7005-002
PW=10μs
D.C.≤1%
P.G
50Ω
G
S
D
ID= --7A
RL=2.14Ω
VDD= --15V
VOUT
FSS179
VIN
0V
--10V
VIN
ID -- VGS
Gate-to-Source Voltage, VGS -- V
Drain-to-Source Voltage, VDS -- V
ID -- VDS
IT13964
IT13965
0
--4.0
--0.5
0
0
--7.0
--3.5
--4.0
--2.5
--3.0
--5.5
--6.5
--6.0
--4.5
--5.0
--1.5
--1.0
--2.0
--1.0
--0.2 --0.3 --0.4
--0.1
--0.5 --0.6 --0.7 --0.8 --0.9
--0.5
0
--18
--16
--14
--12
--1.0
--1.5
--2.0
--2.5
--3.5
--3.0
--10
--8
--6
--4
--2
--3.0V
VGS= --2.5V
VDS= --10V


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