www.vishay.com

Document Number: 91145

2

S-Pending-Rev. A, 16-Jun-08

IRFI614G, SiHFI614G

Vishay Siliconix

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width

≤ 300 µs; duty cycle ≤ 2 %.

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

-65

°C/W

Maximum Junction-to-Case (Drain)

-5.5

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

250

-

-

V

ΔV

-

0.39

-

V/°C

Gate-Source Threshold Voltage

2.0

-

4.0

V

Gate-Source Leakage

-

-

± 100

nA

Zero Gate Voltage Drain Current

-

-

25

µA

-

-

250

Drain-Source On-State Resistance

--

2.0

Ω

Forward Transconductance

0.80

-

-

S

Dynamic

Input Capacitance

f = 1.0 MHz, see fig. 5

-

140

-

pF

Output Capacitance

-42

-

Reverse Transfer Capacitance

-9.6

-

Drain to Sink Capacitance

C

f = 1.0 MHz

-

12

-

Total Gate Charge

--

8.2

nC

Gate-Source Charge

--

1.8

Gate-Drain Charge

--

4.5

Turn-On Delay Time

-7.0

-

ns

Rise Time

-7.6

-

Turn-Off Delay Time

-16

-

Fall Time

-7.0

-

Internal Drain Inductance

Between lead,

6 mm (0.25") from

package and center of

die contact

-4.5

-

nH

Internal Source Inductance

-7.5

-

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

MOSFET symbol

showing the

integral reverse

p - n junction diode

--

2.1

A

--

8.4

Body Diode Voltage

--

2.0

V

Body Diode Reverse Recovery Time

-

190

390

ns

Body Diode Reverse Recovery Charge

-

0.64

1.3

µC

Forward Turn-On Time

D

S

G

S

D

G