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SIHFL210 Datasheet(PDF) 4 Page - Vishay Siliconix |
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SIHFL210 Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 8 page www.vishay.com Document Number: 91193 4 S-81377-Rev. A, 30-Jun-08 IRFL210, SiHFL210 Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area 91193_05 300 250 200 150 0 100 100 101 VDS, Drain-to-Source Voltage (V) V GS = 0 V, f = 1 MHz C iss = Cgs + Cgd, Cds Shorted C rss = Cgd C oss = Cds + Cgd C iss C rss C oss 50 91193_06 QG, Total Gate Charge (nC) 20 16 12 8 0 4 02 8 6 4 I D = 3.3 A For test circuit see figure 13 10 V DS = 40 V V DS = 100 V V DS = 160 V 91193_07 101 100 10-1 25 °C 150 °C 0.4 0.8 1.6 1.2 2.0 V GS = 0 V VSD, Source-to-Drain Voltage (V) 91193_08 100 µs 1 ms 10 ms Operation in this area limited by R DS(on) T C = 25 °C T J = 150 °C Single Pulse 102 2 5 2 5 2 5 VDS, Drain-to-Source Voltage (V) 10 102 25 2 5 0.1 1 10 1 25 103 |
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