SIHFL210T-E3 datasheet(3/8 Pages) VISHAY

Part #	SIHFL210T-E3

Description	Power MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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3 / 8 page

Document Number: 91193

www.vishay.com

S-81377-Rev. A, 30-Jun-08

3

IRFL210, SiHFL210

Vishay Siliconix

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width

≤ 300 µs; duty cycle ≤ 2 %.

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Fig. 1 - Typical Output Characteristics, TC = 25 °C

Fig. 2 - Typical Output Characteristics, TC = 150 °C

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

MOSFET symbol

showing the

integral reverse

p - n junction diode

-

0.96

A

Pulsed Diode Forward Currenta

ISM

--

7.7

Body Diode Voltage

VSD

TJ = 25 °C, IS = 0.96 A, VGS = 0 Vb

--

2.0

V

Body Diode Reverse Recovery Time

trr

TJ = 25 °C, IF = 3.3 A, dI/dt = 100 A/µsb

-

150

310

ns

Body Diode Reverse Recovery Charge

Qrr

-

0.60

1.4

µC

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

S

D

G

91193_01

20 µs Pulse Width

T

C = 25 °C

4.5 V

101

100

10-1

100

101

VDS, Drain-to-Source Voltage (V)

10-1

Bottom

Top

V

GS

15 V

10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

91193_02

4.5 V

20 µs Pulse Width

T

C = 150 °C

100

10-1

100

101

VDS, Drain-to-Source Voltage (V)

10-1

Bottom

Top

V

GS

15 V

10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

91193_03

25

°C

150

°C

20 µs Pulse Width

V

DS = 50 V

10-1

100

VGS, Gate-to-Source Voltage (V)

56

7

8

910

4

10-2

91193_04

I

D = 3.3 A

V

GS = 10 V

3.0

0.0

0.5

1.0

1.5

2.0

2.5

- 60 - 40 - 20

0

20

40

60 80 100 120 140 160

TJ, Junction Temperature (°C)

3.5

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