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SIHFL9014-E3 Datasheet(PDF) 1 Page - Vishay Siliconix |
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SIHFL9014-E3 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Document Number: 91195 www.vishay.com S-81412-Rev. A, 07-Jul-08 1 Power MOSFET IRFL9014, SiHFL9014 Vishay Siliconix FEATURES • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • P-Channel • Fast Switching • Ease of Paralleling • Lead (Pb)-free Available DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performace due to an enlarged tab for heatsinking. Power dissipation of greater than 1.25 W is possible in a typical surface mount application. Note a. See device orientation. PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω)VGS = - 10 V 0.50 Qg (Max.) (nC) 12 Qgs (nC) 3.8 Qgd (nC) 5.1 Configuration Single S G D P-Channel MOSFET SOT-223 Available RoHS* COMPLIANT ORDERING INFORMATION Package SOT-223 SOT-223 Lead (Pb)-free IRFL9014PbF IRFL9014TRPbFa SiHFL9014-E3 SiHFL9014T-E3a SnPb IRFL9014 IRFL9014TRa SiHFL9014 SiHFL9014Ta ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS - 60 V Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at - 10 V TC = 25 °C ID - 1.8 A TC = 100 °C - 1.1 Pulsed Drain Currenta IDM - 14 Linear Derating Factor 0.025 W/°C Linear Derating Factor (PCB Mount)e 0.017 Single Pulse Avalanche Energyb EAS 140 mJ Repetitive Avalanche Currenta IAR - 1.8 A Repetitive Avalanche Energya EAR 0.31 mJ * Pb containing terminations are not RoHS compliant, exemptions may apply |
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