Document Number: 91234

www.vishay.com

S-81360-Rev. A, 28-Jul-08

1

Power MOSFET

IRFP460A, SiHFP460A

Vishay Siliconix

FEATURES

Requirement

• Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

• Fully

Characterized

Capacitance

and

Avalanche Voltage and Current

• Lead (Pb)-free Available

APPLICATIONS

• Switch Mode Power Supply (SMPS)

• Uninterruptable Power Supply

• High Speed Power Switching

TYPICAL SMPS TOPOLOGIES

• Full Bridge

• PFC Boost

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

d. 1.6 mm from case.

PRODUCT SUMMARY

500

0.27

105

26

42

Configuration

Single

N-Channel MOSFET

G

D

S

TO-247

G

D

S

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package

TO-247

Lead (Pb)-free

IRP460APbF

SiHFP460A-E3

SnPb

IRP460A

SiHFP460A

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

500

V

Gate-Source Voltage

± 30

Continuous Drain Current

20

A

13

80

Linear Derating Factor

2.2

W/°C

960

mJ

20

A

28

mJ

Maximum Power Dissipation

280

W

dV/dt

3.8

V/ns

Operating Junction and Storage Temperature Range

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

for 10 s

Mounting Torque

6-32 or M3 screw

10

lbf · in

1.1

N · m

* Pb containing terminations are not RoHS compliant, exemptions may apply