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SIHFR120T-E3 Datasheet(PDF) 3 Page - Vishay Siliconix |
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SIHFR120T-E3 Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 8 page Document Number: 91266 www.vishay.com S-Pending-Rev. A, 21-Jul-08 3 IRFR120, IRFU120, SiHFR120, SiHFU120 Vishay Siliconix Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 2 - Typical Output Characteristics, TC = 150 °C Fig. 3 - Typical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- 7.7 A Pulsed Diode Forward Currenta ISM -- 31 Body Diode Voltage VSD TJ = 25 °C, IS = 7.7 A, VGS = 0 Vb -- 2.5 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/µsb - 130 260 ns Body Diode Reverse Recovery Charge Qrr - 0.65 1.3 µC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT S D G |
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