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MBR10100CT Datasheet(PDF) 1 Page - Vishay Siliconix |
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MBR10100CT Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 4 page MBR1090CT & MBR10100CT Vishay General Semiconductor Document Number: 88666 Revision: 07-May-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 Dual Common-Cathode High-Voltage Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, dc-to-dc converters or polarity protection application MECHANICAL DATA Case: TO-220AB Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum PRIMARY CHARACTERISTICS IF(AV) 5.0 A x 2 VRRM 90 V, 100 V IFSM 120 A VF 0.75 V TJ max. 150 °C TO-220AB CASE PIN 2 PIN 1 PIN 3 1 2 3 MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL MBR1090CT MBR10100CT UNIT Maximum repetitive peak reverse voltage VRRM 90 100 V Working peak reverse voltage VRWM 90 100 V Maximum DC blocking voltage VDC 90 100 V Maximum average forward rectified current at TC = 105 °C total device per diode IF(AV) 10 5.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 120 A Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz IRRM 0.5 A Voltage rate of change (rated VR) dV/dt 10 000 V/µs Operating junction and storage temperature range TJ, TSTG - 65 to + 150 °C |
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