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IRFR9020 Datasheet(PDF) 1 Page - Vishay Siliconix

Part # IRFR9020
Description  Power MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

IRFR9020 Datasheet(HTML) 1 Page - Vishay Siliconix

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Document Number: 90350
www.vishay.com
S-Pending-Rev. A, 10-Jun-08
WORK-IN-PROGRESS
1
Power MOSFET
IRFR9020, IRFU9020, SiHFR9020, SiHFU9020
Vishay Siliconix
FEATURES
• Surface Mountable (Order As IRFR9020/SiHFR9020)
• Straight Lead Option (Order As IRFU9020/SiHFU9020)
• Repetitive Avalanche Ratings
• Dynamic dV/dt Rating
• Simple Drive Requirements
• Ease of Paralleling
• Lead (Pb)-free Available
DESCRIPTION
The Power MOSFET technology is the key to Vishay’s
advanced line of Power MOSFET transistors. The efficient
geometry and unique processing of this latest “State of the
Art” design achieves: very low on-state resistance combined
with high transconductance; superior reverse energy and
diode recovery dV/dt.
The Power MOSFET transistors also feature all of the well
established advantages of MOSFET’S such as voltage
control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
Surface mount packages enhance circuit performance by
reducing stray inductances and capacitance. The TO-252
surface mount package brings the advantages of Power
MOSFET’s to high volume applications where PC Board
surface mounting is desirable. The surface mount option
IRFR9020/SiHFR9020 is provided on 16mm tape. The
straight lead option IRFR9020/SiHFR9020 of the device is
called the IPAK (TO-251).
They are well suited for applications where limited heat
dissipation is required such as, computers and peripherals,
telecommunication equipment, DC/DC converters, and a
wide range of consumer products.
Note
a. See device orientation.
PRODUCT SUMMARY
VDS (V)
- 50
RDS(on) (Ω)VGS = - 10 V
0.28
Qg (Max.) (nC)
14
Qgs (nC)
6.5
Qgd (nC)
6.5
Configuration
Single
S
G
D
P-Channel MOSFET
DPAK
(TO-252)
IPAK
(TO-251)
Available
RoHS*
COMPLIANT
ORDERING INFORMATION
Package
DPAK (TO-252)
DPAK (TO-252)
DPAK (TO-252)
IPAK (TO-251)
Lead (Pb)-free
IRFR9020PbF
IRFR9020TRPbFa
IRFR9020TRLPbFa
IRFU9020PbF
SiHFR9020-E3
SiHFR9020T-E3a
SiHFR9020TL-E3a
SiHFU9020-E3
SnPb
IRFR9020
IRFR9020TRa
IRFR9020TRLa
IRFU9020
SiHFR9020
SiHFR9020Ta
SiHFR9020TLa
SiHFU9020
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
- 50
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
VGS at - 10 V
TC = 25 °C
ID
- 9.9
A
TC = 100 °C
- 6.3
Pulsed Drain Currenta
IDM
- 40
Linear Derating Factor
0.33
W/°C
Single Pulse Avalanche Energyb
EAS
440
mJ
Repetitive Avalanche Currenta
IAR
- 9.9
A
Repetitive Avalanche Energya
EAR
4.2
mJ
* Pb containing terminations are not RoHS compliant, exemptions may apply


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