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SIHFR310TR-E3 Datasheet(PDF) 2 Page - Vishay Siliconix |
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SIHFR310TR-E3 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 8 page www.vishay.com Document Number: 91272 2 S-81367-Rev. A, 21-Jul-08 IRFR310, IRFU310, SiHFR310, SiHFU310 Vishay Siliconix Note a. When mounted on 1" square PCB ( FR-4 or G-10 material). Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient (PCB Mounted, steady-state)a RthJA -50 °C/W Maximum Junction-to-Ambient RthJA - 110 Maximum Junction-to-Case RthJC -5.0 SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 400 - - V VDS Temperature Coefficient ΔV DS/TJ Reference to 25 °C, ID = 1 mA - 0.47 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 400 V, VGS = 0 V - - 25 µA VDS = 320 V, VGS = 0 V, TJ = 125 °C - - 250 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 1.0 Ab -- 3.6 Ω Forward Transconductance gfs VDS = 50 V, ID = 1.0 Ab 0.97 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5c - 170 - pF Output Capacitance Coss -34 - Reverse Transfer Capacitance Crss -6.3 - Total Gate Charge Qg VGS = 10 V ID = 2.0 A, VDS = 320 V, see fig. 6 and 13b, c -- 12 nC Gate-Source Charge Qgs -- 1.9 Gate-Drain Charge Qgd -- 6.5 Turn-On Delay Time td(on) VDD = 200 V, ID = 2.0 A, RG = 24 Ω, RD = 95 Ω, see fig. 10b, c -7.9 - ns Rise Time tr -9.9 - Turn-Off Delay Time td(off) -21 - Fall Time tf -11 - Internal Drain Inductance LD Between lead, 6 mm (0.25") from package and center of die contact -4.5 - nH Internal Source Inductance LS -7.5 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- 1.7 A Pulsed Diode Forward Currenta ISM -- 6.0 Body Diode Voltage VSD TJ = 25 °C, IS = 1.7 A, VGS = 0 Vb -- 1.6 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 2.0 A, dI/dt = 100 A/µsb - 240 540 ns Body Diode Reverse Recovery Charge Qrr - 0.85 1.6 µC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) D S G S D G |
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