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IRFR9022PBF Datasheet(PDF) 3 Page - Vishay Siliconix |
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IRFR9022PBF Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 9 page Document Number: 91349 www.vishay.com S-Pending-Rev. A, 10-Jun-08 3 IRFR9022, IRFU9022, SiHFR9022, SiHFU9022 Vishay Siliconix Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig. 1 - Typical Output Characteristics Fig. 2 - Typical Transfer Characteristics Fig. 3 - Typical Saturation Characteristics Fig. 4 - Maximum Safe Operating Area Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- - 9.9 A Pulsed Diode Forward Currenta ISM -- - 40 Body Diode Voltage VSD TJ = 25 °C, IS = - 9.9 A, VGS = 0 Vb -- - 6.3 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = - 9,7 A, dI/dt = 100 A/µsb 56 110 280 ns Body Diode Reverse Recovery Charge Qrr 0.17 0.34 0.85 nC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT S D G |
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