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IRFR430ATRLPBF Datasheet(PDF) 4 Page - Vishay Siliconix |
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IRFR430ATRLPBF Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 8 page www.vishay.com Document Number: 91276 4 S-81366-Rev. A, 07-Jul-08 IRFR430A, IRFU430A, SiHFR430A, SiHFU430A Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area 1 10 100 1000 VDS, Drain-to-Source Voltage (V) 1 10 100 1000 10000 Coss Crss Ciss VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds+ Cgd 0 4 8 12 16 20 0 2 5 7 10 12 Q , Total Gate Charge (nC) G I = D 5.0A V = 100V DS V = 250V DS V = 400V DS 0.1 1 10 100 0.2 0.5 0.8 1.1 1.4 V ,Source-to-Drain Voltage (V) SD V = 0 V GS T = 150 C J ° T = 25 C J ° 10 100 1000 10000 VDS , Drain-toSource Voltage (V) 0.1 1 10 100 Tc = 25°C Tj = 150°C Single Pulse 1msec 10msec OPERATION IN THIS AREA LIMITED BY RDS(on) 100μsec |
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