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SIHFZ44STR-E3 Datasheet(PDF) 1 Page - Vishay Siliconix

Part # SIHFZ44STR-E3
Description  Power MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SIHFZ44STR-E3 Datasheet(HTML) 1 Page - Vishay Siliconix

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Document Number: 91293
www.vishay.com
S-Pending-Rev. A, 23-Jul-08
WORK-IN-PROGRESS
1
Power MOSFET
IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L
Vishay Siliconix
FEATURES
• Advanced Process Technology
• Surface Mount (IRFZ44S, SiHFZ44S)
• Low-Profile Through-Hole (IRFZ44L, SiHFZ44L)
• 175 °C Operating Temperature
• Fast Switching
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extermely low
on resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
power MOSFETs are well known for, provides the designer
with an extermely efficient reliabel deviece for use in a wide
variety of applications.
The D2PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and lowest possible on-resistance
in any existing surface mount package. The D2PAK is
suitable for high current applications because of its low
internal connection resistance and can dissipate up to 2.0 W
in a typical surface mount application.
The through-hole version (IRFZ44L/SiHFZ44L) is available
for low profile applications.
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V; starting TJ = 25 °C, L = 44 µH, RG = 25 Ω, IAS = 51 A (see fig. 12).
c. ISD ≤ 51 A, dI/dt ≤ 250 A/µs, VDD ≤ VDS, TJ ≤ 175 °C.
d. 1.6 mm from case.
e. Calculated continuous current based on maximum allowable junction temperature.
f. Uses IRFZ44/SiHFZ44 data and test conditions.
PRODUCT SUMMARY
VDS (V)
60
RDS(on) (Ω)VGS = 10 V
0.028
Qg (Max.) (nC)
67
Qgs (nC)
18
Qgd (nC)
25
Configuration
Single
N-Channel MOSFET
G
D
S
D2PAK (TO-263)
G
D
S
I2PAK (TO-262)
Available
RoHS*
COMPLIANT
ORDERING INFORMATION
Package
D2PAK (TO-263)
D2PAK (TO-263)
D2PAK (TO-263)
I2PAK (TO-262)
Lead (Pb)-free
IRFZ44SPbF
IRFZ44STRRPbFa
IRFZ44STRLPbFa
IRFZ44LPbF
SiHFZ44S-E3
SiHFZ44STR-E3a
SiHFZ44STL-E3a
SiHFZ44L-E3
SnPb
IRFZ44S
IRFZ44STRRa
IRFZ44STRLa
IRFZ44L
SiHFZ44S
SiHFZ44STRa
SiHFZ44STLa
SiHFZ44L
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltagef
VDS
60
V
Gate-Source Voltagef
VGS
± 20
Continuous Drain Currente
VGS at 10 V
TC = 25 °C
ID
50
A
Continuous Drain Current
TC = 100 °C
36
Pulsed Drain Currenta, e
IDM
200
Linear Derating Factor
1.0
W/°C
Single Pulse Avalanche Energyb
EAS
100
mJ
Maximum Power Dissipation
TA = 25 °C
PD
3.7
W
TC = 25 °C
150
Peak Diode Recovery dV/dtc, f
dV/dt
4.5
V/ns
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 175
°C
Soldering Recommendations (Peak Temperatured)
for 10 s
300
* Pb containing terminations are not RoHS compliant, exemptions may apply


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