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SIHFZ44STR-E3 Datasheet(PDF) 1 Page - Vishay Siliconix |
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SIHFZ44STR-E3 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Document Number: 91293 www.vishay.com S-Pending-Rev. A, 23-Jul-08 WORK-IN-PROGRESS 1 Power MOSFET IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L Vishay Siliconix FEATURES • Advanced Process Technology • Surface Mount (IRFZ44S, SiHFZ44S) • Low-Profile Through-Hole (IRFZ44L, SiHFZ44L) • 175 °C Operating Temperature • Fast Switching • Lead (Pb)-free Available DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extermely efficient reliabel deviece for use in a wide variety of applications. The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRFZ44L/SiHFZ44L) is available for low profile applications. Note a. See device orientation. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V; starting TJ = 25 °C, L = 44 µH, RG = 25 Ω, IAS = 51 A (see fig. 12). c. ISD ≤ 51 A, dI/dt ≤ 250 A/µs, VDD ≤ VDS, TJ ≤ 175 °C. d. 1.6 mm from case. e. Calculated continuous current based on maximum allowable junction temperature. f. Uses IRFZ44/SiHFZ44 data and test conditions. PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω)VGS = 10 V 0.028 Qg (Max.) (nC) 67 Qgs (nC) 18 Qgd (nC) 25 Configuration Single N-Channel MOSFET G D S D2PAK (TO-263) G D S I2PAK (TO-262) Available RoHS* COMPLIANT ORDERING INFORMATION Package D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) I2PAK (TO-262) Lead (Pb)-free IRFZ44SPbF IRFZ44STRRPbFa IRFZ44STRLPbFa IRFZ44LPbF SiHFZ44S-E3 SiHFZ44STR-E3a SiHFZ44STL-E3a SiHFZ44L-E3 SnPb IRFZ44S IRFZ44STRRa IRFZ44STRLa IRFZ44L SiHFZ44S SiHFZ44STRa SiHFZ44STLa SiHFZ44L ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltagef VDS 60 V Gate-Source Voltagef VGS ± 20 Continuous Drain Currente VGS at 10 V TC = 25 °C ID 50 A Continuous Drain Current TC = 100 °C 36 Pulsed Drain Currenta, e IDM 200 Linear Derating Factor 1.0 W/°C Single Pulse Avalanche Energyb EAS 100 mJ Maximum Power Dissipation TA = 25 °C PD 3.7 W TC = 25 °C 150 Peak Diode Recovery dV/dtc, f dV/dt 4.5 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C Soldering Recommendations (Peak Temperatured) for 10 s 300 * Pb containing terminations are not RoHS compliant, exemptions may apply |
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