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MBR20H200CT Datasheet(PDF) 3 Page - Vishay Siliconix |
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MBR20H200CT Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 5 page MBR20H200CT, MBRF20H200CT & SB20H200CT-1 Vishay General Semiconductor Document Number: 88786 Revision: 18-Apr-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 Figure 3. Typical Instantaneous Forward Characteristics Per Diode Figure 4. Typical Reverse Characteristics Per Diode 100 10 0.1 1 Instantaneous Forward Voltage (V) T J = 125 °C T J = 175 °C T J = 25 °C T J = 75 °C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0.1 0.01 1 10 100 1000 Percent of Rated Peak Reverse Voltage (%) 10 000 T J = 125 °C T J = 175 °C T J = 25 °C T J = 75 °C 10 20 30 40 50 60 70 80 90 100 Figure 5. Typical Junction Capacitance Per Diode Figure 6. Typical Transient Thermal Impedance Per Diode 100 1000 10 000 0.1 1 10 100 10 Reverse Voltage (V) 0.01 10 1 100 10 100 0.1 0.1 1 MBRF MBR, MBRB t - Pulse Duration (s) |
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