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BYG20I Datasheet(PDF) 1 Page - Vishay Siliconix |
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BYG20I Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 5 page BYG20D thru BYG20J Vishay General Semiconductor Document Number: 88958 Revision: 27-Aug-07 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 Ultrafast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • Soft recovery characteristics • Ultrafast reverse recovery time • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency rectification of power supply, inverters, converters and freewheeling diodes for consumer, automotive and telecommunication. MECHANICAL DATA Case: DO-214AC (SMA) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test, HE3 suffix for high reliability grade (AEC Q101 qualified), meets JESD 201 class 2 whisker test Polarity: Color band denotes the cathode end PRIMARY CHARACTERISTICS IF(AV) 1.5 A VRRM 200 V to 600 V IFSM 30 A IR 1.0 µA VF 1.4 V trr 75 ns ER 20 mJ TJ max. 150 °C DO-214AC (SMA) MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL BYG20D BYG20G BYG20J UNIT Device marking code BYG20D BYG20G BYG20J Maximum repetitive peak reverse voltage VRRM 200 400 600 V Average forward current IF(AV) 1.5 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 30 A Pulse energy in avalanche mode, non repetitive (inductive load switch off) I(BR)R = 1 A, TJ = 25 °C ER 20 mJ Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C |
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