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Document Number: 73449

S-61965-Rev. B, 09-Oct-06

Vishay Siliconix

Si1869DH

FUNCTIONAL BLOCK DIAGRAM

Notes:

a. Surface Mounted on FR4 Board.

c. Pulse test: pulse width

≤ 300 µs, duty cycle ≤ 2 %.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

Marking Code

VC

XX

Lot Traceability

and Date Code

Part # Code

SC70-6

Top View

6

4

1

2

3

5

S2

ON/OFF

R1, C1

D2

D2

R2

Ordering Information: Si1869DH-T1-E3 (Lead (Pb)-free)

D2

S2

ON/OFF

R2

1

4

6

5

Q1

Q2

Si1869DH

R1,

C1

2, 3

Parameter

Symbol

Limit

Unit

Drain-Source Voltage (D2-S2)

- 20

V

Input Voltage

20

ON/OFF Voltage

8

Load Current

± 1.2

A

± 3

- 0.4

1.0

W

Operating Junction and Storage Temperature Range

- 55 to 150

°C

ESD Rating, MIL-STD-883D Human Body Model (100 pF, 1500

Ω)ESD

2

kV

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

100

125

°C/W

Maximum Junction-to-Foot (Q2)

44

55

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

OFF Characteristics

Reverse Leakage Current

1

µA

Diode Forward Voltage

0.4

0.6

1.1

V

ON Characteristics

Input Voltage Range

1.8

20

V

Drain to Source Breakdown Voltage

(P-Channel)

- 20

On-Resistance (P-Channel) at 1 A

0.132

0.165

Ω

0.177

0.222

0.242

0.303

On-State (P-Channel) Drain-Current

1

A

1