SI2301CDS datasheet(1/6 Pages) VISHAY

Part #	SI2301CDS

Description	P-Channel 20-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Vishay Siliconix

Si2301CDS

Document Number: 68741

S-81446-Rev. A, 23-Jun-08

www.vishay.com

1

P-Channel 20-V (D-S) MOSFET

FEATURES

•

Halogen-free Option Available

•

TrenchFET® Power MOSFET

APPLICATIONS

•

Load Switch

MOSFET PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

ID (A)

a

Qg (Typ.)

- 20

0.112 at VGS = - 4.5 V

- 3.1

3.3 nC

0.142 at VGS = - 2.5 V

- 2.7

G

TO-236

(SOT-23)

S

D

Top View

2

3

1

Si2301CDS (N1)*

* Marking Code

Ordering Information: Si2301CDS-T1-E3 (Lead (Pb)-free)

Si2301CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)

Notes:

a. Based on TC = 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under Steady State conditions is 175 °C/W.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

- 20

V

Gate-Source Voltage

VGS

± 8

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

- 3.1

A

TC = 70 °C

- 2.5

TA = 25 °C

- 2.3b, c

TA = 70 °C

- 1.8b, c

Pulsed Drain Current

IDM

- 10

Continuous Source-Drain Diode Current

TC = 25 °C

IS

- 1.3

TA = 25 °C

- 0.72b, c

Maximum Power Dissipation

TC = 25 °C

PD

1.6

W

TC = 70 °C

1.0

TA = 25 °C

0.86b, c

TA = 70 °C

0.55b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb, d

≤ 5 s

RthJA

120

145

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

62

78

RoHS

COMPLIANT

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