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SI2305ADS Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI2305ADS Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 7 page www.vishay.com 2 Document Number: 69940 S-82713-Rev. C, 10-Nov-08 Vishay Siliconix Si2305ADS New Product Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 175 °C/W. Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta, b t ≤ 10 s RthJA 100 130 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 60 75 SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 8 V VDS Temperature Coefficient ΔV DS/TJ ID = - 250 µA - 55 mV/°C VGS(th) Temperature Coefficient ΔV GS(th)/TJ 2.1 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 0.45 - 0.8 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 8 V, VGS = 0 V - 1 µA VDS = - 8 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta ID(on) VDS ≤ - 5 V, VGS = - 4.5 V - 5 A Drain-Source On-State Resistancea RDS(on) VGS = - 4.5 V, ID = - 4.1 A 0.032 0.040 Ω VGS = - 2.5 V, ID = - 3.4 A 0.048 0.060 VGS = - 1.8 V, ID = - 2.0 A 0.070 0.088 Forward Transconductancea gfs VDS = - 5 V, ID = - 4.1 A 8S Dynamicb Input Capacitance Ciss VDS = - 4 V, VGS = 0 V, f = 1 MHz 740 pF Output Capacitance Coss 290 Reverse Transfer Capacitance Crss 190 Total Gate Charge Qg VDS = - 4 V, VGS = - 4.5 V, ID = - 4.1 A 7.8 15 nC VDS = - 4 V, VGS = - 2.5 V, ID = - 4.1 A 4.5 9 Gate-Source Charge Qgs 1.2 Gate-Drain Charge Qgd 1.6 Gate Resistance Rg f = 1 MHz 1.4 7 14 Ω Turn-On Delay Time td(on) VDD = - 4 V, RL = 1.2 Ω ID ≅ - 3.3 A, VGEN = - 4.5 V, Rg = 1 Ω 13 20 ns Rise Time tr 35 53 Turn-Off DelayTime td(off) 32 48 Fall Time tf 10 20 Turn-On Delay Time td(on) VDD = - 4 V, RL = 1.2 Ω ID ≅ - 3.3 A, VGEN = - 8 V, Rg = 1 Ω 510 Rise Time tr 11 17 Turn-Off DelayTime td(off) 22 33 Fall Time tf 16 24 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C - 1.4 A Pulse Diode Forward Currenta ISM - 10 Body Diode Voltage VSD IF = - 3.3 A - 0.8 - 1.2 V Body Diode Reverse Recovery Time trr IF = - 3.3 A, dI/dt = 100 A/µs, TJ = 25 °C 33 50 ns Body Diode Reverse Recovery Charge Qrr 14 21 nC Reverse Recovery Fall Time ta 14 ns Reverse Recovery Rise Time tb 19 |
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