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SI2305ADS Datasheet(PDF) 2 Page - Vishay Siliconix

Part # SI2305ADS
Description  P-Channel 8-V (D-S) MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI2305ADS Datasheet(HTML) 2 Page - Vishay Siliconix

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Document Number: 69940
S-82713-Rev. C, 10-Nov-08
Vishay Siliconix
Si2305ADS
New Product
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 175 °C/W.
Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta, b
t
≤ 10 s
RthJA
100
130
°C/W
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
60
75
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = - 250 µA
- 8
V
VDS Temperature Coefficient
ΔV
DS/TJ
ID = - 250 µA
- 55
mV/°C
VGS(th) Temperature Coefficient
ΔV
GS(th)/TJ
2.1
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
- 0.45
- 0.8
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 8 V, VGS = 0 V
- 1
µA
VDS = - 8 V, VGS = 0 V, TJ = 55 °C
- 10
On-State Drain Currenta
ID(on)
VDS ≤ - 5 V, VGS = - 4.5 V
- 5
A
Drain-Source On-State Resistancea
RDS(on)
VGS = - 4.5 V, ID = - 4.1 A
0.032
0.040
Ω
VGS = - 2.5 V, ID = - 3.4 A
0.048
0.060
VGS = - 1.8 V, ID = - 2.0 A
0.070
0.088
Forward Transconductancea
gfs
VDS = - 5 V, ID = - 4.1 A
8S
Dynamicb
Input Capacitance
Ciss
VDS = - 4 V, VGS = 0 V, f = 1 MHz
740
pF
Output Capacitance
Coss
290
Reverse Transfer Capacitance
Crss
190
Total Gate Charge
Qg
VDS = - 4 V, VGS = - 4.5 V, ID = - 4.1 A
7.8
15
nC
VDS = - 4 V, VGS = - 2.5 V, ID = - 4.1 A
4.5
9
Gate-Source Charge
Qgs
1.2
Gate-Drain Charge
Qgd
1.6
Gate Resistance
Rg
f = 1 MHz
1.4
7
14
Ω
Turn-On Delay Time
td(on)
VDD = - 4 V, RL = 1.2 Ω
ID ≅ - 3.3 A, VGEN = - 4.5 V, Rg = 1 Ω
13
20
ns
Rise Time
tr
35
53
Turn-Off DelayTime
td(off)
32
48
Fall Time
tf
10
20
Turn-On Delay Time
td(on)
VDD = - 4 V, RL = 1.2 Ω
ID ≅ - 3.3 A, VGEN = - 8 V, Rg = 1 Ω
510
Rise Time
tr
11
17
Turn-Off DelayTime
td(off)
22
33
Fall Time
tf
16
24
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
- 1.4
A
Pulse Diode Forward Currenta
ISM
- 10
Body Diode Voltage
VSD
IF = - 3.3 A
- 0.8
- 1.2
V
Body Diode Reverse Recovery Time
trr
IF = - 3.3 A, dI/dt = 100 A/µs, TJ = 25 °C
33
50
ns
Body Diode Reverse Recovery Charge
Qrr
14
21
nC
Reverse Recovery Fall Time
ta
14
ns
Reverse Recovery Rise Time
tb
19


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