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SI2305ADS-T1-GE3 Datasheet(PDF) 4 Page - Vishay Siliconix |
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SI2305ADS-T1-GE3 Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 7 page www.vishay.com 4 Document Number: 69940 S-82713-Rev. C, 10-Nov-08 Vishay Siliconix Si2305ADS New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage VSD -Source-to-Drain Voltage (V) 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 TJ = 150 °C TJ = 25 °C 0.2 0.3 0.4 0.5 0.6 0.7 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.00 0.02 0.04 0.06 0.08 0.10 024 6 8 VGS - Gate-to-Source Voltage (V) TA = 25 °C TA = 125 °C ID =4.1 A 0 10 20 30 0.001 0.01 0.1 1 10 100 Time (s) Safe Operating Area, Junction-to-Ambient 0.1 100 1 10 0.01 0.1 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 1ms 10 ms 100 ms 1s 10 s DC 1 10 TA = 25 °C Single Pulse Limited byRDS(on)* |
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