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SI3410DV Datasheet(PDF) 6 Page - Vishay Siliconix |
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SI3410DV Datasheet(HTML) 6 Page - Vishay Siliconix |
6 / 7 page www.vishay.com 6 Document Number: 69254 S-72070-Rev. A, 08-Oct-07 Vishay Siliconix Si3410DV New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?69254. Normalized Thermal Transient Impedance, Junction-to-Ambient 0.01 0.10 1.00 10-3 10-2 0 0 0 1 0 1 1 10-1 10-4 100 0.2 0.1 0.05 0.02 Square Wave Pulse Duration (s) Single Pulse t1 t2 Notes: PDM 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 110 °C/W 3. TJM - TA = PDMZthJA(t) t1 t2 4. Surface Mounted Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Case 10-3 10-2 0 1 1 10-1 10-4 0.2 0.1 Duty Cycle = 0.5 Square Wave Pulse Duration (s) 1 0.1 0.01 0.05 0.02 Single Pulse |
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