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SI3437DV-T1-E3 Datasheet(PDF) 5 Page - Vishay Siliconix |
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SI3437DV-T1-E3 Datasheet(HTML) 5 Page - Vishay Siliconix |
5 / 7 page Vishay Siliconix Si3437DV Document Number: 73899 S-62238–Rev. A, 06-Nov-06 www.vishay.com 5 MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted * The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dis- sipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0.0 0.3 0.6 1.0 1.3 1.6 0 25 50 75 100 125 150 TC – Case Temperature (°C) Power, Junction-to-Foot 0.0 0.8 1.6 2.4 3.2 4.0 0 25 50 75 100 125 150 TC – Case Temperature (°C) Power Derating, Junction-to-Ambient 0.0 0.3 0.6 0.9 1.2 1.5 0 25 50 75 100 125 150 TC – Case Temperature (°C) |
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