SI3437DV-T1-E3 datasheet(5/7 Pages) VISHAY

Part #	SI3437DV-T1-E3

Description	P-Channel 150-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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5 / 7 page

Vishay Siliconix

Si3437DV

Document Number: 73899

S-62238–Rev. A, 06-Nov-06

www.vishay.com

5

MOSFET TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

* The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dis-

sipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.

Current Derating*

0.0

0.3

0.6

1.0

1.3

1.6

0

25

50

75

100

125

150

TC – Case Temperature (°C)

Power, Junction-to-Foot

0.0

0.8

1.6

2.4

3.2

4.0

0

25

50

75

100

125

150

TC – Case Temperature (°C)

Power Derating, Junction-to-Ambient

0.0

0.3

0.6

0.9

1.2

1.5

0

25

50

75

100

125

150

TC – Case Temperature (°C)

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SI3437DV-T1-E3 Datasheet(PDF) 5 Page - Vishay Siliconix

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