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SI3451DV-T1-E3 Datasheet(PDF) 4 Page - Vishay Siliconix |
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SI3451DV-T1-E3 Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 7 page www.vishay.com 4 Document Number: 73701 S-71597-Rev. B, 30-Jul-07 Vishay Siliconix Si3451DV New Product TYPICAL CHARACTERISTICS 25 °C, unless noted Source-Drain Diode Forward Voltage Threshold Voltage 1.0 1.2 0.00 0.2 0.4 0.6 0.8 VSD - Source-to-Drain Voltage (V) 1 10 0.1 TA = 150 °C TA = 25 °C 0.6 0.7 0.8 0.9 1.0 1.1 1.2 - 50 - 25 0 25 50 75 100 125 150 TJ - Temperature (°C) ID = 250 µA On-Resistance vs. Gate-to-Source Voltage Single Pulse Power 0.04 0.12 0.20 0.28 0.36 123 4 5 ID = 2.6 A VGS - Gate-to-Source Voltage (V) TA = 125 °C TA = 25 °C 0 8 2 4 Time (sec) 1600 10 6 0.1 0.01 100 TA = 25 °C Single Pulse Safe Operating Area 100 1 0.1 1 10 100 0.001 10 TA = 25 °C Single Pulse 0.1 *rDS(on) Limited VDS - Drain-to-Source Voltage (V) *VGS minimum VGS at which rDS(on) is specified 0.01 10 ms 100 ms dc 1 s 10 s |
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