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SI3459BDV-T1-E3 Datasheet(PDF) 5 Page - Vishay Siliconix |
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SI3459BDV-T1-E3 Datasheet(HTML) 5 Page - Vishay Siliconix |
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5 / 7 page  Document Number: 69954 S-80430-Rev. A, 03-Mar-08 www.vishay.com 5 Vishay Siliconix Si3459BDV New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 1 2 3 4 0 255075 100 125 150 TC - Case Temperature (°C) Power Junction-to-Case 0 1 2 3 4 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power Junction-to-Ambient 0.0 0.3 0.6 0.9 1.2 1.5 0 25 50 75 100 125 150 TA -Ambient Temperature (°C) |
Similar Part No. - SI3459BDV-T1-E3 |
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Similar Description - SI3459BDV-T1-E3 |
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