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SI3483CDV-T1-E3 Datasheet(PDF) 4 Page - Vishay Siliconix |
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SI3483CDV-T1-E3 Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 7 page www.vishay.com 4 Document Number: 68603 S-80893-Rev. A, 21-Apr-08 Vishay Siliconix Si3483CDV New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 TJ = 150 °C 10 VSD - Source-to-Drain Voltage (V) 1 100 TJ = 25 °C 1.2 1.4 1.6 1.8 2.0 2.2 2.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power 0.00 0.02 0.04 0.06 0.08 0.10 0246 8 10 VGS - Gate-to-Source Voltage (V) TJ = 25 °C TJ = 125 °C ID = 6.1 A 0 15 30 5 10 Time (s) 1 600 10 20 0.1 0.01 100 25 Safe Operating Area VDS - Drain-to-Source Voltage (V) * V > GS minimum VGS at which RDS(on) is specified 100 1 0.1 1 10 100 0.01 10 0.1 TA = 25 °C Single Pulse Limited by RDS(on)* BVDSS Limited DC 1 ms 10 ms 100 ms 1 s 10 s |
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